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Power-scalable 1.57 microm mode-locked semiconductor disk laser using wafer fusion
Esa J Saarinen1, Janne Puustinen, Alexei Sirbu
1Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland. esa.j.saarinen@tut.fi
Optics Letters
|October 20, 2009
Summary
This study presents the first wafer-fused semiconductor disk laser, achieving high-power, passively mode-locked operation at 1.57 micrometers. Wafer fusion enables efficient heat management and power scaling for these advanced lasers.
Area of Science:
- Optics and Photonics
- Materials Science
- Semiconductor Lasers
Background:
- Semiconductor disk lasers (SDLs) offer high power and good beam quality.
- Long-wavelength operation is crucial for applications like telecommunications.
- Integrating disparate materials for improved performance is a key challenge.
Purpose of the Study:
- To demonstrate the first wafer-fused, passively mode-locked semiconductor disk laser.
- To achieve high output power at 1.57 micrometers wavelength.
- To showcase the potential of wafer fusion for power scaling.
Main Methods:
- Wafer fusion of InP-based active medium with GaAs/AlGaAs distributed Bragg reflector.
- Fabrication of an integrated monolithic gain mirror.
- Implementation of an intracavity wedged diamond heat spreader for efficient thermal management.
Main Results:
- Achieved passively mode-locked operation at 1.57 micrometers.
- Produced over 0.6 W of average output power at 15°C with 16 ps pulse width.
- Total output power of 0.86 W was observed.
Conclusions:
- Wafer fusion offers significant advantages over monolithic growth for InP-based gain structures.
- This technique demonstrates high potential for power scaling of long-wavelength SDLs.
- The integrated monolithic gain mirror design is effective for efficient heat dissipation.
