Effects of oxide formation around core circumference of silicon-on-oxidized-porous-silicon strip waveguides

We have studied the effect of oxidation on the propagation loss and surface roughness of silicon-on-oxidized-porous-silicon strip waveguides fabricated using proton-beam irradiation and electrochemical etching. A thin thermal oxide is formed around the core of the waveguide, enabling the symmetric reduction of core size and roughness on all sides. Significant loss reduction from about 10 dB/cm to 1 dB/cm has been obtained in TE and TM polarizations after oxidation smoothening of both the bottom and the sidewalls by 20 nm. This corresponds well with simulations using the beam-propagation method that show significant contributions from both surfaces.