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Updated: Jun 19, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Defect structure in lithium-doped polymer-derived SiCN ceramics characterized by Raman and electron paramagnetic
Emre Erdem1, Valentina Mass, Armin Gembus
1Institut für Physikalische Chemie I, Universität Freiburg, D-79104, Freiburg, Germany.
Abstract:
Lithium-doped polymer-derived silicon carbonitride ceramics (SiCN:Li) synthesized at various pyrolysis temperatures, have been investigated by means of multifrequency and multipulse electron paramagnetic resonance (EPR) and Raman spectroscopy in order to determine different defect states that may impact the materials electronic properties. In particular, carbon- and silicon-based 'dangling bonds' at elevated, as well as metallic networks containing Li0 in the order of 1 microm at low pyrolysis temperatures have been observed in concentrations ranging between 10(14) and 10(17) spins mg(-1).
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