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Gate-controlled quantum collimation in nanocolumn resonant tunneling transistors
J Wensorra1, M I Lepsa, S Trellenkamp
1Institute for Bio and Nanosystems (IBN-1) and JARA (Jülich Aachen Research Alliance), Research Centre Jülich GmbH, D-52425 Jülich, Germany.
Nanotechnology
|October 22, 2009
Summary
Nanoscaled resonant tunneling transistors (RTTs) fabricated using GaAs/AlAs quantum wells exhibit optimal room temperature performance. These nano-RTTs are suitable for low-power, high-speed nanoelectronic circuits.
Area of Science:
- Semiconductor Physics
- Nanotechnology
- Quantum Electronics
Background:
- Resonant tunneling transistors (RTTs) are crucial for advanced electronics.
- Quantum well structures offer unique electronic properties.
- Miniaturization of transistors is key to next-generation computing.
Purpose of the Study:
- To fabricate and characterize nanoscaled resonant tunneling transistors (RTTs).
- To investigate the performance of GaAs/AlAs double-barrier quantum well (DBQW) structures at the nanoscale.
- To explore the potential of these nano-RTTs in low-power nanoelectronic circuits.
Main Methods:
- Fabrication of vertical nanocolumns using electron-beam lithography.
- MBE-grown GaAs/AlAs double-barrier quantum well (DBQW) structures.
- Precise mask alignment (<10 nm) and gate positioning (~20 nm).
- Utilizing a specific n++/i/n++ doping profile for electron collimation.
Main Results:
- Achieved optimal room temperature performance for nano-RTTs with diameters <70 nm.
- Observed peak-to-valley current ratios above 2.
- Demonstrated a peak current swing factor of approximately 6 for gate voltages between -6 and +6 V.
- Confirmed electron collimation due to the confining potential.
Conclusions:
- The fabricated nano-RTTs show promising performance for practical applications.
- These devices are well-suited for low-power, high-speed nanoelectronic circuits.
- The results highlight the potential of MBE-grown DBQW structures in nanoscale device fabrication.
