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Photorefractive phase shift induced by nonlinear electronic transport.

Q N Wang, R M Brubaker, D D Nolte

|October 22, 2009

Summary

Photorefractive phase shifts up to pi/2 are achievable in semiconductors with nonlinear carrier transport. This phenomenon, driven by velocity saturation, mimics trap-limited behavior and requires reevaluation of prior studies.

Area of Science:

Semiconductor Physics
Photorefractive Materials
Nonlinear Optics

Background:

Photorefractive phase shifts are crucial for optical applications.
Previous studies often assumed linear carrier transport.
Understanding nonlinear transport is key to optimizing photorefractive devices.

Purpose of the Study:

To investigate photorefractive phase shift generation under DC fields.
To explore the role of nonlinear photocarrier velocity in phase shift dynamics.
To analyze the impact of velocity saturation on space-charge field relaxation.

Main Methods:

Theoretical analysis of photocarrier transport under DC fields.
Modeling of photorefractive effects considering nonlinear velocity-field dependence.

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Investigation of velocity saturation and its influence on dielectric relaxation.

Main Results:

Achieved photorefractive phase shifts as large as pi/2.
Demonstrated that velocity saturation disables dielectric relaxation.
Observed that nonlinear transport leads to saturated trap densities mimicking trap-limited behavior.
Identified strong velocity saturation in direct-gap semiconductors due to hot-electron transport (Gunn effect).

Conclusions:

Nonlinear photocarrier transport, particularly velocity saturation, significantly impacts photorefractive phase shifts.
The space-charge field's inability to relax under these conditions leads to trap-limited behavior.
Existing models of photorefractive trap-limited fields require reevaluation considering transport nonlinearity.