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Related Experiment Video

Updated: Jun 19, 2026

Direct Imaging of Laser-driven Ultrafast Molecular Rotation
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Published on: February 4, 2017

Ultrafast, all-silicon light modulator.

C C Wang, M Currie, S Alexandrou

    Optics Letters
    |October 27, 2009
    PubMed
    Summary
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    Researchers developed an ultrafast, all-silicon light modulator using the carrier-refraction effect. This silicon modulator achieves significant light-intensity modulation with low voltage and high bandwidth potential.

    Area of Science:

    • Photonics
    • Optoelectronics
    • Materials Science

    Background:

    • Silicon photonics is crucial for integrated optical circuits.
    • Efficient light modulation is essential for high-speed optical communication.

    Purpose of the Study:

    • To propose an ultrafast, all-silicon light-intensity modulator.
    • To leverage the carrier-refraction effect for refractive index modulation.

    Main Methods:

    • Utilizing the carrier-refraction effect in silicon.
    • Employing an electric-field-induced Bragg reflector on a silicon-on-insulator waveguide.
    • Converting refractive index modulation to light-intensity modulation.

    Main Results:

    • A modulator with a 300-microm interaction length is expected to achieve ~40% modulation depth with a 5-V bias.

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    Direct Imaging of Laser-driven Ultrafast Molecular Rotation
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    Published on: February 4, 2017

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    High-speed Particle Image Velocimetry Near Surfaces

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  • The modulator's bandwidth is limited by the RC time constant, calculated to be ~40 GHz.
  • The device is based on free-carrier depletion for modulation.
  • Conclusions:

    • An efficient, all-silicon modulator design is presented.
    • The proposed device offers high modulation depth and bandwidth potential.
    • This technology is promising for integrated silicon photonics applications.