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Deep-UV generation by frequency quadrupling of a high-power GaAlAs semiconductor laser
Optics Letters
|October 28, 2009
Abstract:
Tunable UV radiation near 215 nm was produced by frequency quadrupling the 860-nm emission of a mode-locked external-cavity compound semiconductor laser containing a tapered GaAlAs amplifier. A KNbO(3) crystal generated the 430-nm second harmonic, which was doubled by a beta-BaB(2)O(4) crystal, producing tunable UV radiation with as much as 15 microW of average power.
