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Broadband multilayer antireflection coating for semiconductor laser facets.

D M Braun, R L Jungerman

    Optics Letters
    |October 28, 2009
    PubMed
    Summary

    Researchers developed a novel triple-layer antireflection coating for semiconductor lasers. This advanced coating significantly reduces facet reflectivity, enhancing performance for 1550-nm and 1310-nm InGaAsP lasers.

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    Area of Science:

    • Optics and Photonics
    • Materials Science
    • Semiconductor Device Physics

    Background:

    • Semiconductor lasers are crucial for optical communications.
    • Facet reflectivity in lasers can limit performance and bandwidth.
    • Minimizing facet reflectivity is essential for advanced laser applications.

    Purpose of the Study:

    • To develop and characterize a highly effective antireflection coating for InGaAsP semiconductor lasers.
    • To achieve ultra-low facet reflectivity across a broad wavelength range.
    • To assess the coating's applicability for various optoelectronic devices.

    Main Methods:

    • Fabrication of a triple-layer antireflection coating using aluminum oxide (Al(2)O(3)), silicon (Si), and silicon dioxide (SiO(2)).
    • Optical characterization of the coating's reflectivity and bandwidth on 1550-nm and 1310-nm InGaAsP semiconductor lasers.
    • Analysis of coating performance for specific reflectivity thresholds.

    Main Results:

    • Achieved a minimum facet reflectivity of 1 x 10(-6) for 1550-nm InGaAsP lasers.
    • Demonstrated a 90 nm bandwidth with reflectivity ≤ 5 x 10(-5) for 1550-nm lasers.
    • Attained a facet reflectivity of 3 x 10(-6) and 30 nm bandwidth (≤ 5 x 10(-5)) for 1310-nm InGaAsP lasers.

    Conclusions:

    • The triple-layer Al(2)O(3)/Si/SiO(2) coating effectively minimizes facet reflectivity in InGaAsP lasers.
    • The coating enables high-performance broadband laser sources and devices.
    • This technology is suitable for external-cavity-tuned lasers, edge-emitting LEDs, and laser amplifiers.

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