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Time-dependent second-harmonic generation from the Si-SiO(2) interface induced by charge transfer.

J G Mihaychuk, J Bloch, Y Liu

|October 29, 2009

Summary

The second-harmonic signal from oxidized silicon varies over seconds due to third-harmonic light absorption. This absorption causes charge transfer and trapping in the oxide layer, with detrapping taking minutes.

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Area of Science:

Solid-state physics
Surface science
Optoelectronics

Background:

Oxidized silicon (Si-SiO2) is a fundamental material in semiconductor technology.
Second-harmonic generation (SHG) is a sensitive probe of surface and interface properties.
Understanding charge dynamics at the Si-SiO2 interface is crucial for device performance.

Purpose of the Study:

To investigate the temporal dynamics of the second-harmonic signal from oxidized Si(001).
To elucidate the underlying physical mechanisms responsible for the observed signal variations.
To characterize the charge transfer and trapping processes at the Si-SiO2 interface.

Main Methods:

Time-resolved second-harmonic generation (SHG) measurements.
Utilized ultrashort laser pulses (770 nm, 110 fs, 76 MHz).
Investigated the influence of weak third-harmonic light generated in situ.

Main Results:

Observed temporal variations in the SHG signal on a timescale of seconds.
Identified absorption of weak third-harmonic light as the cause of these variations.
Determined that charge transfer and trapping in the oxide layer induce the signal change, with detrapping requiring minutes.

Conclusions:

The temporal behavior of SHG from oxidized Si(001) is linked to photoinduced charge dynamics.
Third-harmonic generation, even at low power, significantly impacts interfacial charge states.
The Si-SiO2 interface exhibits slow charge trapping and detrapping dynamics relevant to optical measurements.