Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

MOSFET: Depletion Mode

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Correlation between Obstructive Sleep Apnea and Non-Alcoholic Fatty Liver Disease before and after Metabolic Bariatric Surgery.

Obesity surgery·2020

Same author

Important role of surface plasmon coupling with the quantum wells in a surface plasmon enhanced color-converting structure of colloidal quantum dots on quantum wells.

Optics express·2020

Same author

Preparation and characterization of polyoxometalate-modified poly(vinyl alcohol)/polyethyleneimine hybrids as a chemical and biological self-detoxifying material.

Polymer degradation and stability·2020

Same author

Spatial range of the plasmonic Dicke effect in an InGaN/GaN multiple quantum well structure.

Nanotechnology·2020

Same author

Theoretical analysis of a white-light LED array based on a GaN nanorod structure.

Applied optics·2020

Same author

[Effects of the injectable glycol-chitosan based hydrogel on the proliferation and differentiation of human dental pulp cells].

Beijing da xue xue bao. Yi xue ban = Journal of Peking University. Health sciences·2020

Search research articles

Related Experiment Video

Updated: Jun 19, 2026

Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements

Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements

Published on: February 28, 2016

Passive mode locking of semiconductor lasers based on nonlinear directional coupling.

C W Hsu, C C Yang

|October 31, 2009

Summary

A new passive mode-locking method for semiconductor lasers uses nonlinear directional coupling. This technique generates higher pulse energy from the output port than is present inside the laser cavity.

Area of Science:

Optics and Photonics
Semiconductor Lasers
Nonlinear Optics

Background:

Passive mode-locking is crucial for generating ultrashort laser pulses.
Semiconductor lasers offer advantages in size and cost for laser applications.
Nonlinear optical effects are essential for advanced laser functionalities.

Purpose of the Study:

To introduce and numerically demonstrate a novel passive mode-locking mechanism for semiconductor lasers.
To investigate the use of nonlinear directional coupling for pulse manipulation.
To achieve higher output pulse energy from a semiconductor laser system.

Main Methods:

Numerical simulation of a semiconductor ring laser cavity.
Implementation of a passive mode-locking scheme utilizing nonlinear directional coupling.

More Related Videos

Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy

Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy

Published on: November 22, 2019

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

Related Experiment Videos

Last Updated: Jun 19, 2026

Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements

Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements

Published on: February 28, 2016

Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy

Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy

Published on: November 22, 2019

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

Analysis of pulse compression and energy transfer dynamics within the directional coupler.

Main Results:

Demonstration of a novel passive mode-locking mechanism based on nonlinear directional coupling.
Pulse compression observed in the bar port of the directional coupler due to linear coupling and gain saturation.
Generation of a shorter pulse with higher energy from the cross port, exceeding intracavity pulse energy.

Conclusions:

The proposed nonlinear directional coupling mechanism enables efficient passive mode-locking in semiconductor lasers.
The cross port of the directional coupler can serve as an effective output coupler, delivering enhanced pulse energy.
This method offers a promising route for developing high-energy semiconductor laser sources.