Modulation Z-scan technique for characterization of photorefractive crystals

We propose a simple single-beam configuration for characterization of the amplitude, speed of growth, and polarization properties of the photoinduced refractive-index change that is due to a drift photorefractive mechanism of nonlinearity in crystals, namely, the modulation Z-scan technique, based on the modulation of an externally applied electric field. The results of a simple theoretical model developed for one-dimensional parabolic photorefractive lens formation in this configuration are illustrated by original experiments with a semi-insulating GaAs crystal at lambda -1.06 microm.