Related Experiment Video
Updated: Jun 18, 2026
Automated Delivery of Microfabricated Targets for Intense Laser Irradiation Experiments
Published on: January 28, 2021
A 1 A laser driver in 0.35 microm complementary metal oxide semiconductor technology for a pulsed time-of-flight
Jan Nissinen1, Juha Kostamovaara
1Department of Electrical and Information Engineering, Electronics Laboratory, University of Oulu, P.O. Box 4500, Linnanmaa FIN-90014, Finland.
Abstract:
An integrated complementary metal oxide semiconductor (CMOS) current pulse generator is presented which achieves an ampere-scale peak current pulse with a rise time and pulse width of less than 1 and 2.5 ns (pulse width at half maximum), respectively. The generator is implemented in a 0.35 microm CMOS process and consists of four parallel n-type metal oxide semiconductor transistors driven by a scaled buffer chain to achieve fast switching.
