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Updated: Jun 18, 2026

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Direct correlation of structural domain formation with the metal insulator transition in a VO2 nanobeam
Shixiong Zhang1, Jung Yen Chou, Lincoln J Lauhon
1Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA.
Abstract:
The electrical resistance of single VO(2) nanobeams was measured while simultaneously mapping the domain structure with Raman spectroscopy to investigate the relationship between structural domain formation and the metal-insulator transition. With increasing temperature, the nanobeams transformed from the insulating monoclinic M(1) phase to a mixture of the Mott-insulating M(2) and metallic rutile phases. Domain fractions were used to extract the temperature dependent resistivity of the M(2) phase, which showed an activated behavior consistent with the expected Mott-Hubbard gap. Metallic monoclinic phases were also produced by direct injection of charge into devices, decoupling the Mott metal-insulator transition from the monoclinic to rutile structural phase transition.
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