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Updated: Jun 18, 2026

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Low-energy Cathodoluminescence for (Oxy)Nitride Phosphors
Published on: November 15, 2016
New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation
M Płuska1, A Czerwinski, J Ratajczak
1Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland. mpluska@ite.waw.pl
Journal of Microscopy
|November 12, 2009
Abstract:
Cathodoluminescence (CL) studies are widely applied in semi-conductor science and technology. However, for structures with a p-n junction the CL spatial distribution can be strongly affected by internal current flows of the electron beam induced current generated within the structure. This influence is the investigated in application to CL studies of degradation in aged laser diodes with InGaN multiquantum wells.

