Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Joule-Thomson Effect01:21

Joule-Thomson Effect

The Joule-Thomson effect, also known as the Joule-Kelvin effect, describes the temperature change of a fluid when it is forced through a valve or porous plug while keeping it in a thermally insulated environment. This experiment is called a throttling process. This is an important effect widely used in refrigeration and the liquefaction of gases.
This experiment forces high-pressure gas through a throttle valve or a porous plug to a lower-pressure region. The gas expands as it passes through to...
Diamagnetic Shielding of Nuclei: Local Diamagnetic Current01:14

Diamagnetic Shielding of Nuclei: Local Diamagnetic Current

An applied magnetic field causes the electrons present in the molecule to circulate, setting up a local diamagnetic current within the molecule. The local diamagnetic current arising from circulating sigma-bonding electrons induces a magnetic field, Blocal that opposes the applied magnetic field, B0. The effective magnetic field experienced by these nuclei is given by the difference between the applied and local magnetic fields in a phenomenon called local diamagnetic shielding. Essentially,...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

C-terminal long-QT type 1 R562S-Kv7.1 variant, the first variant in helix C impairing β-adrenergic response of the slow delayed rectifier K+ channel.

Europace : European pacing, arrhythmias, and cardiac electrophysiology : journal of the working groups on cardiac pacing, arrhythmias, and cardiac cellular electrophysiology of the European Society of Cardiology·2026
Same author

Shared Extracellular Matrix Remodeling and Proteomic Signature in Dupuytren's Disease and Relapsed Clubfoot Tissue.

Cells·2026
Same author

Glucagon-like Peptide-1 as a Promising Marker of Postoperative Intestinal Ischemia After Abdominal Aortic Surgery.

Annals of vascular surgery·2026
Same author

[Ultrasound-Guided Injection of the Thoracolumbar Fascia in the Treatment of Low Back Pain: Methodological Approach and Anatomical Study].

Acta chirurgiae orthopaedicae et traumatologiae Cechoslovaca·2026
Same author

Beat-to-Beat QT Variability: A Population Study of the QT Variability Index Composition.

Diagnostics (Basel, Switzerland)·2026
Same author

Identification and functional assessment of a KCNH2 compound heterozygosity in a patient with presumed idiopathic ventricular fibrillation ascertains the diagnosis of long QT syndrome type 2.

Europace : European pacing, arrhythmias, and cardiac electrophysiology : journal of the working groups on cardiac pacing, arrhythmias, and cardiac cellular electrophysiology of the European Society of Cardiology·2026

Related Experiment Video

Updated: Jun 18, 2026

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy
10:40

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy

Published on: June 28, 2016

Phonon-assisted current noise in molecular junctions.

Federica Haupt1, Tomás Novotný, Wolfgang Belzig

  • 1Fachbereich Physik, Universität Konstanz, D- 78457 Konstanz, Germany.

Physical Review Letters
|November 13, 2009
PubMed
Summary
This summary is machine-generated.

We studied how vibrations (phonons) affect electrical noise in tiny electronic junctions. Our findings reveal distinct noise contributions and predict significant inelastic noise for D2 molecules in experiments.

More Related Videos

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Related Experiment Videos

Last Updated: Jun 18, 2026

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy
10:40

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy

Published on: June 28, 2016

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Area of Science:

  • Condensed Matter Physics
  • Mesoscopic Physics
  • Quantum Transport

Background:

  • Understanding electronic current noise in nanoscale systems is crucial for developing advanced electronic devices.
  • Phonon scattering significantly influences electron transport properties in nanostructures.
  • Previous theoretical models often simplify or neglect the detailed impact of electron-phonon interactions on noise.

Purpose of the Study:

  • To investigate the influence of phonon scattering on electronic current noise in nanojunctions.
  • To develop a theoretical framework for analyzing noise contributions in the presence of electron-phonon coupling.
  • To apply the developed theory to a specific molecular junction (D2 molecule) and predict experimental outcomes.

Main Methods:

  • Utilized the nonequilibrium Green's functions formalism, extended with a counting field.
  • Derived an analytical expression for current noise under weak electron-phonon coupling and a single broad electronic level.
  • Analyzed noise contributions based on their voltage dependence at arbitrary temperatures.

Main Results:

  • Identified distinct contributions to electronic current noise arising from phonon scattering.
  • Obtained an analytical formula for current noise applicable to a wide range of temperatures.
  • Predicted a significant inelastic contribution to current noise for a D2 molecule in a break junction setup.

Conclusions:

  • The developed theory provides a robust method for quantifying phonon-induced noise in nanojunctions.
  • The findings highlight the importance of inelastic scattering processes in molecular electronics.
  • The predictions for D2 molecular junctions offer a clear target for experimental verification.