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Field-induced layer thinning transition on free-standing smectic films
Maria S S Pereira1, Marcelo L Lyra, Italo N de Oliveira
1Instituto de Física, Universidade Federal de Alagoas 57072-970 Maceió-AL, Brazil.
Physical Review Letters
|November 13, 2009
Summary
Free-standing smectic films exhibit field-induced layer thinning below the bulk transition temperature. This phenomenon, observed in films with negative dielectric anisotropy, follows a power law dependent on temperature and molecular shape.
Area of Science:
- Condensed matter physics
- Materials science
- Soft matter physics
Background:
- Smectic films typically show stepwise layer reduction above the bulk transition temperature.
- Understanding film behavior under external fields is crucial for device applications.
Purpose of the Study:
- To investigate field-induced layer thinning in smectic films below the bulk transition temperature.
- To explore the influence of negative dielectric anisotropy on film layering.
Main Methods:
- Utilizing an extended McMillan's model to simulate film behavior.
- Analyzing the phase diagram of the layering transition.
Main Results:
- Demonstrated a field-induced layer thinning transition occurring below the bulk transition temperature.
- Observed that film thickness reduction follows a power law when the field exceeds the bulk transition field.
- The power law exponent is dependent on temperature and molecular aspect ratio.
Conclusions:
- Smectic films with negative dielectric anisotropy exhibit unique field-induced layering behavior.
- The extended McMillan's model accurately describes this transition and its dependence on physical parameters.
