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Tuning the electron-phonon coupling in multilayer graphene with magnetic fields
C Faugeras1, M Amado, P Kossacki
1LNCMI-CNRS, BP 166, 38042 Grenoble Cedex 9, France.
Physical Review Letters
|November 13, 2009
Summary
We studied electron-phonon interactions in multilayer epitaxial graphene using magneto-Raman scattering. Resonant interactions between Landau levels and E2g phonons were observed, revealing insights into electron-phonon coupling strength.
Area of Science:
- Condensed Matter Physics
- Materials Science
Background:
- Graphene's unique electronic properties make it a candidate for advanced electronic devices.
- Understanding electron-phonon interactions is crucial for controlling graphene's behavior.
Purpose of the Study:
- Investigate the electron-phonon interaction in multilayer epitaxial graphene.
- Characterize the influence of magnetic fields on phonon behavior.
Main Methods:
- Magneto-Raman scattering spectroscopy was employed.
- Experiments were conducted at low temperatures (4.2 K) under high magnetic fields (up to 33 T).
Main Results:
- Observed distinct avoided crossings between inter-Landau level transitions and E2g optical phonons.
- Noticed significant variations and enhancement in phonon Raman scattering width under resonant conditions.
Conclusions:
- The study provides direct evidence of electron-phonon coupling in epitaxial graphene.
- The results are consistent with a model quantifying electron-phonon interaction strength.
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