Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Search research articles

Related Experiment Video

Updated: Jun 18, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Probing individual quantum dots: noise in self-assembled systems.

K O Vicaro¹, H R Gutiérrez, A C Seabra

¹Instituto de Fisica Gleb Wataghin, CP 6165, Universidade Estadual de Campinas-UNICAMP, 13083-970, Campinas, SP, Brazil.

Journal of Nanoscience and Nanotechnology

|November 14, 2009

Summary

This summary is machine-generated.

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Electrostatic immobilization of antimicrobial peptides on polyethylenimine and their antibacterial effect against Staphylococcus epidermidis.

Colloids and surfaces. B, Biointerfaces·2018

Same author

Different growth regimes in InP nanowire growth mediated by Ag nanoparticles.

Nanotechnology·2017

Same author

Fermi energy dependence of the optical emission in core/shell InAs nanowire homostructures.

Nanotechnology·2017

Same author

On the origins of anomalous elastic moduli and failure strains of GaP nanowires.

Nanotechnology·2017

Same author

Antibacterial and non-cytotoxic ultra-thin polyethylenimine film.

Materials science & engineering. C, Materials for biological applications·2016

Same author

Hyaluronan/chitosan nanofilms assembled layer-by-layer and their antibacterial effect: A study using Staphylococcus aureus and Pseudomonas aeruginosa.

Colloids and surfaces. B, Biointerfaces·2016

This study investigates noise in InAs/InP quantum dot devices, finding random telegraph noise (RTN) linked to a few charge storage centers. Simulations show RTN amplitude variations relate to electrostatic changes and carrier scattering from charged quantum dots.

Area of Science:

Semiconductor Nanostructures
Quantum Dot Physics
Electronic Device Noise

Background:

Lithographically-defined two-terminal devices are crucial for nanoelectronic applications.
Self-assembled Indium Arsenide/Indium Phosphide (InAs/InP) quantum dots offer unique electronic properties.
Understanding noise mechanisms is essential for reliable device performance.

Purpose of the Study:

To characterize the noise behavior in InAs/InP quantum dot devices.
To investigate the origins of random telegraph noise (RTN) in these structures.
To correlate experimental noise observations with numerical simulations.

Main Methods:

Fabrication of two-terminal devices incorporating self-assembled InAs/InP quantum dots.
Experimental measurements of noise characteristics under varying temperature and source-drain voltage.

More Related Videos

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy

Published on: June 28, 2016

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Related Experiment Videos

Last Updated: Jun 18, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy

Published on: June 28, 2016

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Numerical simulations to model charge dynamics and electrostatic potentials within the quantum dot structure.

Main Results:

Observed random telegraph noise (RTN) with tunable relative amplitude up to 150% in specific operating ranges.
Experimental RTN signatures correlated with a minimal number of quantum dots acting as charge storage centers.
Numerical simulations indicated that RTN amplitude modulation is influenced by electrostatic potential profiles and carrier scattering from charged quantum dots.

Conclusions:

The study elucidates the dominant noise mechanism in InAs/InP quantum dot devices as RTN.
A small number of quantum dots significantly impact device noise through charge trapping and scattering.
The findings provide insights into controlling noise in quantum dot-based nanoelectronic devices.