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Probing individual quantum dots: noise in self-assembled systems.

K O Vicaro¹, H R Gutiérrez, A C Seabra

¹Instituto de Fisica Gleb Wataghin, CP 6165, Universidade Estadual de Campinas-UNICAMP, 13083-970, Campinas, SP, Brazil.

Journal of Nanoscience and Nanotechnology

|November 14, 2009

Summary

This study investigates noise in InAs/InP quantum dot devices, finding random telegraph noise (RTN) linked to a few charge storage centers. Simulations show RTN amplitude variations relate to electrostatic changes and carrier scattering from charged quantum dots.

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Area of Science:

Semiconductor Nanostructures
Quantum Dot Physics
Electronic Device Noise

Background:

Lithographically-defined two-terminal devices are crucial for nanoelectronic applications.
Self-assembled Indium Arsenide/Indium Phosphide (InAs/InP) quantum dots offer unique electronic properties.
Understanding noise mechanisms is essential for reliable device performance.

Purpose of the Study:

To characterize the noise behavior in InAs/InP quantum dot devices.
To investigate the origins of random telegraph noise (RTN) in these structures.
To correlate experimental noise observations with numerical simulations.

Main Methods:

Fabrication of two-terminal devices incorporating self-assembled InAs/InP quantum dots.
Experimental measurements of noise characteristics under varying temperature and source-drain voltage.

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Numerical simulations to model charge dynamics and electrostatic potentials within the quantum dot structure.

Main Results:

Observed random telegraph noise (RTN) with tunable relative amplitude up to 150% in specific operating ranges.
Experimental RTN signatures correlated with a minimal number of quantum dots acting as charge storage centers.
Numerical simulations indicated that RTN amplitude modulation is influenced by electrostatic potential profiles and carrier scattering from charged quantum dots.

Conclusions:

The study elucidates the dominant noise mechanism in InAs/InP quantum dot devices as RTN.
A small number of quantum dots significantly impact device noise through charge trapping and scattering.
The findings provide insights into controlling noise in quantum dot-based nanoelectronic devices.