Related Experiment Video
Updated: Jun 18, 2026

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy
Published on: June 28, 2016
A tunable phonon-exciton Fano system in bilayer graphene
Tsung-Ta Tang1, Yuanbo Zhang, Cheol-Hwan Park
1Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA.
Abstract:
Fano resonances are features in absorption, scattering or transport spectra resulting from the interaction of discrete and continuum states. They have been observed in a variety of systems. Here, we report a many-body Fano resonance in bilayer graphene that is continuously tunable by means of electrical gating. Discrete phonons and continuous exciton (electron-hole pair) transitions are coupled by electron-phonon interactions, yielding a new hybrid phonon-exciton excited state. It may also be possible to control the phonon-exciton coupling with an optical field. This tunable phonon-exciton system could allow novel applications such as phonon lasers.
More Related Videos
11:42Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
08:04Excitonic Hamiltonians for Calculating Optical Absorption Spectra and Optoelectronic Properties of Molecular Aggregates and Solids
Published on: May 27, 2020
Related Concept Videos
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
Valence Bond Theory
Debye–Huckel–Onsager Conductance Equation
Spin–Spin Coupling Constant: Overview
Qualitatively, any spin plus-half nucleus polarizes the spins of its electrons to the minus-half state. Consequently, the paired electron in the hydrogen–carbon bond must have a...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...