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Related Experiment Video

Updated: Jun 18, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

A tunable quantum-dot device based on cross-bar graphene nanoribbon structures.

Z F Wang1, Q W Shi, Jie Chen

  • 1Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.

Journal of Nanoscience and Nanotechnology
|November 26, 2009
PubMed
Summary

We developed a tunable quantum-dot nanoelectronic device using graphene nanoribbons (GNRs). This GNR cross-bar structure allows for controllable quantum dot formation and can be used for random access memory (RAM) applications.

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Area of Science:

  • Nanoscience and Nanotechnology
  • Condensed Matter Physics
  • Quantum Electronics

Background:

  • Graphene nanoribbons (GNRs) offer unique electronic properties for nanoelectronic devices.
  • Quantum dots exhibit discrete energy levels crucial for quantum information processing and memory.
  • Controlling quantum states in nanoscale devices remains a significant challenge.

Purpose of the Study:

  • To present a novel tunable quantum-dot nanoelectronic device.
  • To demonstrate the fabrication and functionality of a GNR cross-bar structure for quantum dot confinement.
  • To explore the potential of this device for random access memory (RAM) applications.

Main Methods:

  • Fabrication of a patterned graphene nanoribbon (GNR) cross-bar structure.

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  • Utilizing gate voltages to confine electronic states within the GNR cross junction.
  • Modifying the dimensions (length and width) of the cross junction to tune spatial confinement and energy levels.
  • Demonstrating the 'on' and 'off' states of quantum dots via gate voltage control.

    • Main Results:

    • Successfully confined electronic states within the GNR cross junction using gate voltages.
    • Showcased the ability to tune spatial confinement and the number of discrete energy levels by altering junction dimensions.
    • Demonstrated reliable trapping of quantum dots, irrespective of GNR edge irregularities.
    • Achieved controllable 'on'/'off' states for quantum dots through gate voltage manipulation.

    Conclusions:

    • The presented GNR cross-bar structure is a viable platform for tunable quantum dot devices.
    • This device architecture offers a pathway towards robust and controllable quantum dot formation.
    • The design holds promise for the development of next-generation random access memory (RAM) arrays.