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Updated: Jun 17, 2026

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
Published on: April 24, 2014
Cavity design and characteristics of monolithic long-wavelength InAs/InP quantum dash passively mode-locked lasers
1University of New Mexico, Center for High Technology Materials, 1313 Goddard SE, Albuquerque, NM 87106, USA. cylin@unm.edu
Abstract:
By extending the net-gain modulation phasor approach to account for the discrete distribution of the gain and saturable absorber sections in the cavity, a convenient model is derived and experimentally verified for the cavity design of two-section passively mode-locked quantum dash (QDash) lasers. The new set of equations can be used to predict functional device layouts using the measured modal gain and loss characteristics as input. It is shown to be a valuable tool for realizing the cavity design of monolithic long-wavelength InAs/InP QDash passively mode-locked lasers.

