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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Optically pumped rolled-up InGaAs/GaAs quantum dot microtube lasers
1Department of Electrical and Computer Engineering, McGill University 3480 University Street, Montreal, Quebec H3A 2A7, Canada.
Optics Express
|December 10, 2009
Summary
Researchers achieved room-temperature lasing in semiconductor microtubes using quantum dots. These novel devices exhibit ultralow thresholds and narrow linewidths, paving the way for advanced photonic applications.
Area of Science:
- Semiconductor physics
- Optoelectronics
- Nanotechnology
Background:
- Rolled-up semiconductor microtubes offer unique optical properties.
- Self-organized quantum dots are efficient gain media for lasers.
Purpose of the Study:
- To demonstrate room-temperature lasing in rolled-up semiconductor microtubes incorporating InGaAs/GaAs quantum dots.
- To characterize the lasing performance, including threshold and linewidth.
Main Methods:
- Fabrication of free-standing quantum dot microtubes by selective release from a GaAs substrate.
- Characterization of lasing properties at room temperature.
- Analysis of lasing modes using finite-difference time domain (FDTD) and planar dielectric waveguide models.
Main Results:
- Achieved lasing in semiconductor microtubes at room temperature.
- Incorporated self-organized InGaAs/GaAs quantum dots as the gain medium.
- Observed an ultralow threshold of approximately 4 microwatts.
- Measured a minimum intrinsic linewidth of approximately 0.2-0.3 nm.
- Analyzed multiple lasing modes.
Conclusions:
- Successful demonstration of room-temperature lasing in rolled-up quantum dot microtubes.
- The microtubes exhibit excellent lasing performance with low thresholds and narrow linewidths.
- The findings suggest potential for these microtubes in advanced optoelectronic devices.

