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Published on: November 30, 2012
The characterization of GH shifts of surface plasmon resonance in a waveguide using the FDTD method
Geum-Yoon Oh1, Doo Gun Kim, Young-Wan Choi
1School of Electrical and Electronics Engineering, Chung-Ang University, 221 Heuksuk-dong, Dongjak-gu, Seoul 156-756, Korea.
Abstract:
We have explicated the Goos-Hänchen (GH) shift in a mum-order Kretchmann-Raether configuration embedded in an optical waveguide structure by using the finite-difference time-domain method. For optical waveguide-type surface plasmon resonance (SPR) devices, the precise derivation of the GH shift has become critical. Artmann's equation, which is accurate enough for bulk optics, is difficult to apply to waveguide-type SPR devices. This is because Artmann's equation, based on the differentiation of the phase shift, is inaccurate at the critical and resonance angles where drastic phase changes occur. In this study, we accurately identified both the positive and the negative GH shifts around the incidence angle of resonance. In a waveguide-type Kretchmann-Raether configuration with an Au thin film of 50 nm, positive and negative lateral shifts of -0.75 and + 1.0 microm are obtained on the SPR with the incident angles of 44.4 degrees and 47.5 degrees, respectively, at a wavelength of 632.8 nm.

