Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
MOSFET Amplifiers01:17

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Low-chirp push-pull dual-ring modulator with 144 Gb/s PAM-4 data transmission.

Optics express·2020
Same author

Reconfigurable electro-optical directed-logic circuit using carrier-depletion micro-ring resonators.

Optics letters·2014
Same author

Efficient modulation of 1.55 μm radiation with gated graphene on a silicon microring resonator.

Nano letters·2014
Same author

High-Q terahertz Fano resonance with extraordinary transmission in concentric ring apertures.

Optics express·2014
Same author

High-contrast terahertz wave modulation by gated graphene enhanced by extraordinary transmission through ring apertures.

Nano letters·2014
Same author

Direct chemical conversion of graphene to boron- and nitrogen- and carbon-containing atomic layers.

Nature communications·2014
Same journal

Denoising algorithm of Φ-OTDR systems based on adaptive fractional wavelet transform denoising.

Optics express·2026
Same journal

Millisecond photon-to-photon latency and high-speed volumetric projection system for optogenetics.

Optics express·2026
Same journal

Polarization-encoded coaxial structured light for high-precision 3D surface profilometry.

Optics express·2026
Same journal

Discrete freeform optical design based on collaborative optimization of point cloud and local normals.

Optics express·2026
Same journal

Ultrafast ghost imaging with 25 GHz speckle switching and wavelength-division multiplexing.

Optics express·2026
Same journal

Atomic vapor cells fabricated by femtosecond laser welding of standard-optical-quality glass.

Optics express·2026
See all related articles

Related Experiment Video

Updated: Jun 17, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Silicon dual-ring modulator.

Qianfan Xu1

  • 1Department of Electrical and Computer Engineering, Rice University, 6100 Main St. MS-366, Houston, TX 77005, USA. qianfan@rice.edu

Optics Express
|December 10, 2009
PubMed
Summary
This summary is machine-generated.

A novel silicon dual-ring electro-optic modulator offers enhanced speed (>40 Gbit/s), wide bandwidth, and high performance. This device improves upon single-ring designs and enables active wavelength control for optical communications.

More Related Videos

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
09:46

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Published on: August 8, 2025

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

Related Experiment Videos

Last Updated: Jun 17, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
09:46

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Published on: August 8, 2025

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

Area of Science:

  • Photonics and Optical Engineering
  • Integrated Optics
  • Semiconductor Devices

Background:

  • Silicon photonics is crucial for high-speed optical communication systems.
  • Existing single-ring modulators face limitations in speed and performance.
  • Developing advanced modulators is key to meeting increasing data demands.

Purpose of the Study:

  • To propose and analyze a novel silicon electro-optic modulator based on coupled microring resonators.
  • To demonstrate improved optical and electrical performance compared to single-ring designs.
  • To explore the potential for active wavelength control.

Main Methods:

  • Design and simulation of a dual-ring microring resonator structure.
  • Integration of a simple circuit for high-speed modulation.
  • Analysis of optical bandwidth, extinction ratio, and insertion loss.
  • Evaluation of modulation speed and feedback control capabilities.

Main Results:

  • The proposed dual-ring modulator exhibits wide optical bandwidth.
  • Achieved high extinction ratio and low insertion loss.
  • Demonstrated a fast modulation speed exceeding 40 Gbit/s.
  • The device shows superior optical and electrical performance over single-ring modulators.
  • The dual-ring design enables a feedback signal for active wavelength modulation control.

Conclusions:

  • The silicon dual-ring microring resonator modulator represents a significant advancement in electro-optic modulation.
  • This device offers a promising solution for high-speed, high-performance optical communication systems.
  • The integrated feedback mechanism allows for precise wavelength tuning, enhancing device versatility.