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Improved metal-semiconductor position detector with oscillating lateral photovoltaic effect
1Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China.
Optics Letters
|December 18, 2009
Summary
We demonstrated an oscillating lateral photovoltaic effect (LPE) in a modified metal-semiconductor structure. This novel oscillating LPE offers enhanced precision for detecting minute displacements.
Area of Science:
- Optoelectronics
- Semiconductor Physics
- Nanotechnology
Background:
- The lateral photovoltaic effect (LPE) is known for its linear response to light position.
- Conventional metal-semiconductor (MS) structures exhibit a linear lateral photovoltage (LPV).
Purpose of the Study:
- To report and characterize an oscillating LPE in a modified MS structure.
- To explore the potential of this oscillating LPE for high-precision displacement sensing.
Main Methods:
- Fabrication of a modified metal-semiconductor (MS) structure.
- Measurement and analysis of the lateral photovoltage (LPV) response to varying light positions.
Main Results:
- Observed an oscillating LPE in the modified MS structure, where LPV varies non-linearly with light position.
- Demonstrated controllable oscillations with sharp changes in LPV based on light position.
Conclusions:
- The oscillating LPE presents a significant advancement over the linear LPE.
- This effect opens new avenues for highly sensitive and precise detection of very small displacements.
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