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Mesoporous nanowire array architecture of manganese dioxide for electrochemical capacitor applications

Cailing Xu1, Yongqing Zhao, Guangwu Yang

  • 1Institute of Applied Magnetics, Key Laboratory of Magnetism and Magnetic Materials of Ministry of Education, School of Physical Science and Technology, Lanzhou University, Lanzhou, China 730000. xucl@lzu.edu.cn

Chemical Communications (Cambridge, England)
|December 22, 2009
PubMed

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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