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Related Experiment Video

Updated: Jun 17, 2026

Convergent Polishing: A Simple, Rapid, Full Aperture Polishing Process of High Quality Optical Flats & Spheres
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Ionic polishing of optical surfaces.

J B Schroeder1, S Bashkin, J F Nester

  • 1Research Department, The Perkin-Elmer Corporation, Norwalk, Connecticut, USA.

Applied Optics
|January 6, 2010
PubMed
Summary
This summary is machine-generated.

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Controlled material removal from insulators was achieved using a positive ion beam, with a sputtering yield of unity observed between 0.5-2.0 MeV. This method shows promise for manufacturing high-quality optical surfaces.

Area of Science:

  • Materials Science
  • Surface Engineering
  • Ion Beam Technology

Background:

  • Controlled surface modification is crucial for advanced material applications.
  • Traditional methods for insulator surface processing can be limited in precision and quality.
  • Ion beam techniques offer potential for highly controlled material removal.

Purpose of the Study:

  • To investigate the controlled removal of material from insulator surfaces using a positive ion beam.
  • To determine the sputtering yield in a specific energy range.
  • To explore the feasibility of this technique for manufacturing high-quality optical surfaces.

Main Methods:

  • Irradiation of insulator surfaces with a positive ion beam.
  • Varying the ion beam energy within the 0.5-2.0 MeV range.

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  • Analysis of material removal and surface characteristics.

    • Main Results:

    • Demonstrated controlled material removal from insulator surfaces.
    • Observed a sputtering yield of unity within the 0.5-2.0 MeV energy range.
    • Identified the potential for achieving high-quality optical surface finishes.

    Conclusions:

    • Positive ion beam irradiation is an effective method for controlled insulator surface modification.
    • A sputtering yield of unity at 0.5-2.0 MeV suggests efficient material removal.
    • The technique is a viable candidate for the fabrication of precision optical components.