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Updated: Jun 17, 2026

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
Published on: January 9, 2014
Nanoscale structural engineering via phase segregation: Au-Ge system
Yu-Lun Chueh1, Cosima N Boswell, Chun-Wei Yuan
1Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720, USA.
Abstract:
A tunable structural engineering of nanowires based on template-assisted alloying and phase segregation processes is demonstrated. The Au-Ge system, which has a low eutectic temperature and negligible solid solubility (<10(-3) atom %) of Au in Ge at low temperatures, is utilized. Depending on the Au concentration of the initial nanowires, final structures ranging from nearly periodic nanodisk patterns to core/shell and fully alloyed nanowires are produced. The formation mechanisms are discussed in detail and characterized by in situ transmission electron microscopy and energy-dispersive spectrometry analyses. Electrical measurements illustrate the metallic and semiconducting characteristics of the fully alloyed and alternating Au/Ge nanodisk structures, respectively.
