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Level-set-based inverse lithography for photomask synthesis.

Yijiang Shen¹, Ngai Wong, Edmund Y Lam

¹Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong. yjshen@eee.hku.hk

|January 7, 2010

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Inverse lithography technology (ILT) solves photomask design challenges by treating it as an inverse problem. A novel level set model demonstrates superior performance over traditional gradient methods for enhanced microlithography.

Area of Science:

Computational lithography
Mathematical modeling in semiconductor manufacturing

Background:

Photomask design for microlithography is a complex inverse problem.
Existing gradient methods face limitations in solving inverse lithography technology (ILT).

Purpose of the Study:

To present a novel level set-based approach for solving the inverse lithography problem.
To demonstrate the superiority of this new method over conventional gradient-based techniques.

Main Methods:

Formulating the inverse lithography problem as an obstacle reconstruction or nonlinear image restoration problem.
Employing a time-dependent level set model with finite difference schemes for discretization.
Implementing first-order temporal and second-order spatial accurate discretization.

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Main Results:

The proposed level set-based ILT effectively addresses the inverse lithography problem.
Experimental results confirm the method's superiority compared to mainstream gradient methods.
The approach provides a robust framework for advanced photomask design.

Conclusions:

The level set time-dependent model offers a powerful and accurate solution for inverse lithography technology.
This method advances computational lithography and semiconductor manufacturing processes.
The findings pave the way for improved precision in microlithography.