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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Narrow spectral response schottky photodiodes
1Air Force Avionics Laboratory, Researchand Technology Division, Wright-Patterson Air Force Base, Ohio, USA.
Applied Optics
|January 12, 2010
Summary
Researchers extended Spicer
Area of Science:
- Semiconductor physics
- Optoelectronics
- Photodiode analysis
Background:
- Schottky photodiodes exhibit unique characteristics influencing their spectral response.
- Optical absorption in semiconductors generates minority carriers, crucial for photodiode operation.
Purpose of the Study:
- To extend Spicer's absorption diffusion model for analyzing Schottky photodiodes.
- To investigate the factors influencing the spectral response of minimally depleted Schottky photodiodes.
Main Methods:
- Adaptation of the absorption diffusion model to account for Schottky photodiode specifics.
- Analysis of spectral response dependence on absorption coefficient variation, region thickness (T), and diffusion length (l).
Main Results:
- Spectral response magnitude and shape are sensitive to the rate of change of the absorption coefficient with wavelength.
- Narrow spectral response is observed only in regions of rapid absorption coefficient change.
- The device demonstrates potential for high quantum efficiency combined with sharp spectral tuning.
Conclusions:
- The extended model accurately describes spectral response in Schottky photodiodes.
- Optimizing material properties and device design can yield highly tunable, efficient photodetectors.
- Rapidly changing absorption coefficients are key to achieving narrow spectral responses.
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