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Electron-poor antimonides: complex framework structures with narrow band gaps and low thermal conductivity
Ulrich Häussermann1, Arkady S Mikhaylushkin
1Department of Chemistry and Biochemistry, Arizona State University, Tempe, AZ 85287-1604, USA.
Electron-poor framework semiconductors, like zinc and cadmium antimonides, exhibit narrow band gaps and low thermal conductivity, making them promising for thermoelectric applications despite limited thermal stability.
Area of Science:
- Materials Science
- Solid State Physics
- Inorganic Chemistry
Background:
- Binary zinc/cadmium antimonides and ternary indium relatives exhibit complex crystal structures.
- These materials possess narrow band gaps near the Fermi level, classifying them as electron-poor framework semiconductors (EPFS).
- EPFS materials, composed of metal and semimetal atoms, feature weakly polar frameworks with multi-center bonded entities.
Purpose of the Study:
- To investigate the structural and electronic properties of electron-poor antimonides.
- To explore the potential of these materials for thermoelectric applications.
- To understand the relationship between bonding characteristics and material complexity.
Main Methods:
- Crystallographic analysis to determine complex structures.
- Electronic structure calculations to identify narrow band gaps.
- Thermal property measurements to assess thermoelectric potential and stability.
Main Results:
- Electron-poor antimonides demonstrate promising thermoelectric properties.
- Remarkably low thermal conductivity was observed in these materials.
- Limited thermal stability, due to polymorphism and low decomposition temperatures (below 600 K), was identified.
Conclusions:
- The localized multi-center bonding is key to the structural complexity of these semiconductors.
- Electron-poor antimonides are related to boron allotropes in their electronic characteristics.
- Despite thermal stability limitations, these materials show significant potential for thermoelectric devices.
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