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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
Terahertz characterization of semiconductor alloy AlInN: negative imaginary conductivity and its meaning: comment
1Institute of Quantum Electronics, ETH Zurich, 8093 Zurich, Switzerland. arno@phys.ethz.ch
Optics Letters
|January 19, 2010
Abstract:
In a recent article [Opt. Lett.34, 2507 (2009)], the authors concluded that the imaginary part of the complex conductivity sigma of an AlInN film was negative. However, this result was obtained using an approximation that is not applicable in this case. Using the correct equation, the data can be well described with a positive imaginary part of sigma.
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