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Surface and interface processes during atomic layer deposition of copper on silicon oxide
Min Dai1, Jinhee Kwon, Mathew D Halls
1Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey 08854, USA.
Langmuir : the ACS Journal of Surfaces and Colloids
|January 23, 2010
Summary
This study reveals how atomic layer deposition of copper on silicon dioxide begins. Molecular hydrogen aids copper atom release and agglomeration, enabling further growth and potentially reducing carbon contamination.
Area of Science:
- Materials Science
- Surface Chemistry
- Nanotechnology
Background:
- Atomic Layer Deposition (ALD) is crucial for thin film fabrication.
- Understanding initial growth mechanisms is key for controlling film properties.
- Copper ALD on dielectrics like SiO(2) presents unique surface chemistry challenges.
Purpose of the Study:
- Investigate the initial surface reactions and growth mechanisms of copper ALD on SiO(2).
- Elucidate the role of a specific copper amidinate precursor and molecular hydrogen.
- Characterize the surface species and reaction pathways involved.
Main Methods:
- In situ Fourier transform infrared (FTIR) spectroscopy.
- Density functional theory (DFT) calculations.
- Atomic Layer Deposition (ALD) experiments.
Main Results:
- Copper(I) di-sec-butylacetamidinate precursor reacts with SiO(2) hydroxyl groups, forming Si-O-Cu-ligand species.
- Molecular hydrogen dissociates ligands, releasing copper atoms for agglomeration and enabling further ALD cycles.
- Ligand rearrangement and removal are temperature-dependent and catalyzed by growing copper particles.
- Carbon contamination in early stages is attributed to ligand attachment to the SiO(2) surface.
Conclusions:
- The initial ALD of copper on SiO(2) involves ligand displacement, hydrogen-assisted metal release, and particle agglomeration.
- Surface chemistry dictates growth behavior and potential contamination.
- ALD process parameters, including temperature and hydrogen treatment, significantly influence copper nucleation and growth.
