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Updated: Jun 16, 2026

A High Performance Impedance-based Platform for Evaporation Rate Detection

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Published on: October 17, 2016

Reactive evaporation in ionized gases.

|January 30, 2010

Summary

Ionizing residual gas significantly enhances reactivity for thin film deposition. This method yields high-quality silicon dioxide (SiO2) and titanium dioxide (TiO2) films with improved optical properties.

Area of Science:

Materials Science
Thin Film Deposition
Optical Coatings

Background:

Conventional reactive evaporation often results in films with non-stoichiometric compositions.
Non-stoichiometric films exhibit increased absorptance and dielectric losses, limiting their performance.
Improved deposition techniques are needed for high-quality optical films.

Purpose of the Study:

To enhance the reactivity of residual gases during thin film deposition.
To produce high-quality silicon dioxide (SiO2), silicon oxynitride (SiOxNy), and titanium dioxide (TiO2) films.
To evaluate the optical properties of deposited films, specifically absorptance and refractive index.

Main Methods:

Utilized a discharge tube with a high current density region for gas ionization within a bell jar.

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Introduced ionized gas directly into a high vacuum region via a nozzle.

Optimized production parameters for SiO2, SiOxNy, and TiO2 film deposition on unheated substrates.

Main Results:

Achieved a considerable increase in reactivity through residual gas ionization.
Produced SiO2 films with negligible absorptance down to 190 nm.
Obtained TiO2 films with high refractive indices up to 2.3.

Conclusions:

Residual gas ionization is an effective method for improving thin film deposition quality.
The developed technique enables the production of low-loss SiO2 and high-refractive-index TiO2 films.
This approach offers a pathway to enhanced optical coatings with superior performance.