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Scanned-laser microscope for photolurminescence studies.

J F Black, C J Summers, B Sherman

|February 2, 2010

Summary

A new scanned-laser microscope effectively maps semiconductor wafers using photoluminescence, proving highly useful for evaluating materials for light-emitting diodes. This advanced imaging tool offers high resolution and rapid analysis for quality control in semiconductor manufacturing.

Area of Science:

Materials Science
Optoelectronics
Semiconductor Physics

Background:

Photoluminescence (PL) is a key technique for characterizing semiconductor materials.
Evaluating semiconductor wafer quality is crucial for optoelectronic device performance, particularly for light-emitting diodes (LEDs).
Existing methods may lack the spatial resolution or speed required for comprehensive wafer evaluation.

Purpose of the Study:

To develop and present a novel scanned-laser microscope for generating photoluminescence maps of semiconductor samples.
To demonstrate the utility of this microscope for evaluating semiconductor wafers intended for LEDs.
To detail the design, construction, and performance of a prototype instrument.

Main Methods:

Development of a scanned-laser microscope system.

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Utilizing photoluminescence to generate spatial maps (images) of semiconductor wafers.

Performance testing of the prototype, including spatial resolution and spectral definition measurements.

Main Results:

The photoluminescence microscope achieves a spatial resolution near 10(-3) cm.
It offers a spectral definition of 100 Å and can scan an area of 0.6 cm x 0.6 cm in seconds.
Demonstrated application to testing GaAsP wafers, comparing results with other testing methods.

Conclusions:

The developed scanned-laser microscope is a valuable tool for semiconductor wafer evaluation.
It provides efficient and high-resolution photoluminescence mapping for quality assessment.
The instrument shows significant promise for optimizing materials used in light-emitting diode fabrication.