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Updated: Jun 16, 2026
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Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities
Published on: November 30, 2012
Summary
Total internal reflection in optical waveguide cavities is possible. For thin-film GaAs waveguides, a refractive index difference over 4% ensures total reflection for single-mode operation.
Area of Science:
- Optoelectronics
- Materials Science
Background:
- Thin-film optical cavities are crucial components in optoelectronic devices.
- Waveguide end faces require specific conditions for efficient light manipulation.
Purpose of the Study:
- To analyze total internal reflection (TIR) of waveguide mode ray components at optical cavity end faces.
- To determine the conditions necessary for TIR in various waveguide modes.
Main Methods:
- Analysis of optical waveguide cavities with parallel, smooth, and perpendicular end faces.
- Derivation and evaluation of conditions for TIR using dispersion relations.
- Application to Gallium Arsenide (GaAs) waveguides.
Main Results:
- TIR is possible at waveguide end faces under specific geometric and material conditions.
- A minimum refractive index difference of 4% between the GaAs waveguide and surrounding medium is required for TIR.
- TIR is highly probable in single-mode GaAs waveguides when this index difference is met.
Conclusions:
- Optimized thin-film optical cavities can achieve efficient light confinement via TIR.
- Material selection and design are critical for enabling TIR in optical waveguides.
- The findings are particularly relevant for single-mode GaAs waveguide applications.
