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Updated: Jun 16, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Localization of dirac electrons in rotated graphene bilayers
G Trambly de Laissardière1, D Mayou, L Magaud
1Laboratoire de Physique Theorique et Modelisation, Universite de Cergy-Pontoise-CNRS, F-95302 Cergy-Pontoise Cedex, France. guy.trambly@u-cergy.fr
Abstract:
For Dirac electrons the Klein paradox implies that the confinement is difficult to achieve with an electrostatic potential although it can be of great importance for graphene-based devices. Here, ab initio and tight-binding approaches are combined and show that the wave function of Dirac electrons can be localized in rotated graphene bilayers due to the Moire pattern. This localization of wave function is maximum in the limit of the small rotation angle between the two layers.
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