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Simulation of characteristic variation in 16 nm gate FinFET devices due to intrinsic parameter fluctuations

Yiming Li1, Chih-Hong Hwang, Ming-Hung Han

  • 1Institute of Communication Engineering, National Chiao-Tung University, Hsinchu, Taiwan. ymli@faculty.nctu.edu.tw

Nanotechnology
|February 4, 2010
PubMed

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