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Updated: Jun 16, 2026

Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities
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Optical Waveguide Structures for CO(2) Lasers.

P K Cheo, J M Berak, W Oshinsky

    Applied Optics
    |February 4, 2010
    PubMed
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    Epitaxially grown gallium arsenide (GaAs) thin-film waveguides with low carrier concentrations exhibit low optical losses and can support multiple guided-wave modes. These structures show potential for integrated optics applications.

    Area of Science:

    • Optoelectronics
    • Materials Science
    • Semiconductor Physics

    Background:

    • Thin-film waveguides are crucial for integrated optical circuits.
    • Gallium arsenide (GaAs) is a key semiconductor material for optoelectronic devices.
    • Controlling carrier concentration in GaAs films impacts optical properties.

    Purpose of the Study:

    • Investigate optical properties of low-carrier-concentration GaAs thin-film waveguides.
    • Characterize guided-wave modes and optical losses.
    • Explore potential for integrated optics applications.

    Main Methods:

    • Epitaxial growth of low-carrier-concentration GaAs films.
    • Fabrication of thin-film waveguide structures with two distinct index profiles.
    • Excitation of guided-wave modes using germanium prism or phase grating couplers.

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    Direct Imaging of Laser-driven Ultrafast Molecular Rotation
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    Published on: February 4, 2017

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  • Characterization using Schottky barrier, Hall measurements, and optical loss measurements at 10.6-microm wavelength.

    • Main Results:

    • Achieved carrier concentrations below 10(12) cm(-3) and high resistivity up to 1.4 x 10(5) ?-cm.
    • Demonstrated low optical losses (<1 dB/cm) for films with N <10(13) cm(-3).
    • Observed simultaneous excitation of orthogonal TE and TM modes in strong guides (Deltan approximately 0.3).
    • Characterized transmission and cutoff in weak guides (Deltan approximately 10(-3)), showing rapid decrease in transmission near cutoff.

    Conclusions:

    • Low-carrier-concentration GaAs thin-film waveguides exhibit promising low optical losses.
    • The distinct index profiles allow for control over guided-wave modes, including simultaneous TE/TM excitation.
    • These findings support the potential of such structures for advanced integrated optoelectronic applications.