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Properties of a Light-Modified-Breakdown Detector in GaAs
Applied Optics
|February 4, 2010
Summary
This study introduces a new light-modified-breakdown (LMB) mode for millimeter-wave detectors using gallium arsenide (GaAs). This mode achieves faster response times and lower noise, outperforming existing technologies in the millimeter spectral region.
Area of Science:
- Solid State Physics
- Terahertz Technology
- Detector Physics
Background:
- Millimeter-wave detectors are crucial for various applications.
- Existing detectors face limitations in speed, noise, and robustness.
- Gallium arsenide (GaAs) is a promising material for high-frequency electronics.
Purpose of the Study:
- To investigate the properties of a bulk-effect millimeter-wave detector utilizing high-purity epitaxial GaAs.
- To evaluate the performance of this detector when operated in a novel light-modified-breakdown (LMB) mode.
- To compare its characteristics with existing detector technologies.
Main Methods:
- Device fabrication using high-purity epitaxial GaAs.
- Operation at cryogenic temperatures (4.2 K).
- Utilizing a new light-modified-breakdown (LMB) mode with dc bias above avalanche breakdown.
Main Results:
- Achieved circuit-limited response time less than 20 nsec in LMB mode, an order of magnitude faster than bulk GaAs and InSb mixers.
- Measured Noise Equivalent Power (NEP) values below 10^-10 W (D* ~ 10^10) in the video detector mode across 10-70 GHz.
- Demonstrated significant advantages in burnout resistance, risetime, or noise compared to competing technologies.
Conclusions:
- The LMB mode in GaAs millimeter-wave detectors offers superior performance.
- This technology presents significant advantages over existing detectors for millimeter spectral applications.
- Further research into operating parameters and frequency dependence is warranted.
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