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Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

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Related Experiment Video

Updated: Jun 16, 2026

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes
11:21

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Published on: March 21, 2018

Highly Sensitive Light-induced Memory Effect with Amorphous Se-SnO(2) Heterojunction.

M Okuda, T Matsushita, T Yamagami

    Applied Optics
    |February 4, 2010
    PubMed
    Summary
    This summary is machine-generated.

    Researchers enhanced the light-induced memory effect in amorphous selenium films by creating a heterojunction with tin dioxide. Applying a reverse bias voltage significantly improved photo-induced image spots, demonstrating enhanced memory capabilities.

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    Last Updated: Jun 16, 2026

    Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes
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    Published on: March 21, 2018

    Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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    A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
    07:12

    A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

    Published on: August 28, 2018

    Area of Science:

    • Materials Science
    • Optoelectronics
    • Semiconductor Physics

    Background:

    • Amorphous selenium films exhibit light-induced memory effects.
    • Heterojunctions can modify electronic and optical properties of materials.
    • Photocurrents are crucial in optoelectronic devices.

    Purpose of the Study:

    • To investigate the light-induced memory effect in amorphous selenium films.
    • To enhance the photo-induced memory effect using a heterojunction structure.
    • To explore the role of bias voltage and electric fields in memory sensitization.

    Main Methods:

    • Fabrication of selenium-tin dioxide (Se-SnO2) heterojunctions.
    • Application of laser beam irradiation and bias voltage.
    • Analysis of photo-induced image spot enhancement.

    Main Results:

    • A heterojunction of Se-SnO2 was successfully fabricated.
    • Applying reverse bias voltage created a high electric field in the selenium film.
    • Remarkable enhancement of photo-induced image spots was observed under simultaneous bias and irradiation.

    Conclusions:

    • The Se-SnO2 heterojunction sensitizes the memory effect in amorphous selenium films.
    • High electric fields induced by photocurrent play a key role in memory enhancement.
    • This approach offers a pathway for improved optoelectronic memory devices.