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Updated: Jun 16, 2026
11:42
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
100-GHz transistors from wafer-scale epitaxial graphene
Y-M Lin1, C Dimitrakopoulos, K A Jenkins
1IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA. yming@us.ibm.com
Science (New York, N.Y.)
|February 6, 2010
Summary
Epitaxial graphene field-effect transistors achieve 100 gigahertz cutoff frequencies. These high-frequency graphene transistors outperform silicon transistors with similar gate lengths.
Area of Science:
- Materials Science
- Electrical Engineering
- Condensed Matter Physics
Background:
- Graphene's exceptional carrier mobility is key for high-frequency electronics.
- Field-effect transistors (FETs) are crucial components in high-frequency applications.
Purpose of the Study:
- To investigate the high-frequency performance of transistors fabricated using epitaxial graphene.
- To compare the performance of these graphene transistors against state-of-the-art silicon transistors.
Main Methods:
- Fabrication of FETs on epitaxial graphene grown on the silicon face of silicon carbide (SiC) wafers.
- Characterization of transistor performance, focusing on cutoff frequency and gate length.
Main Results:
- Achieved a cutoff frequency of 100 gigahertz for transistors with a 240-nanometer gate length.
- Demonstrated superior high-frequency performance compared to silicon transistors of identical gate length.
Conclusions:
- Epitaxial graphene is a promising material for next-generation high-frequency transistors.
- Graphene FETs offer a significant advancement over silicon-based technology for high-speed electronic devices.
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