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Single-crystal electrooptic thin-film waveguide modulators for infrared laser systems.

J F Lotspeich

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    New wideband, low power electrooptic modulators using optical waveguide structures significantly reduce driver power for infrared laser applications. These GaAs-based devices offer low propagation loss and fast response times.

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    Area of Science:

    • Optoelectronics
    • Materials Science
    • Photonics

    Background:

    • Conventional electrooptic modulators require high driver power.
    • Infrared laser applications demand efficient modulation technologies.

    Purpose of the Study:

    • To develop wideband, low power electrooptic modulators for infrared laser applications.
    • To demonstrate reduced driver power requirements compared to existing devices.

    Main Methods:

    • Fabrication of optical waveguide modulators using thin single-crystal Gallium Arsenide (GaAs) layers.
    • Encapsulation of GaAs layers with lower refractive index materials (Cadmium Telluride - CdTe or Arsenic Sulfide - As2S3).
    • Characterization of propagation loss, pulse response rise time, and frequency response.

    Main Results:

    • Achieved a reduction in driver power of two orders of magnitude.
    • Measured minimum propagation loss < 1 dB/cm (TE modes) and < 5 dB/cm (TM modes) at 10.6 micrometers.
    • Demonstrated a 20-pF modulator with a 3 nsec rise time and frequency response beyond 200 MHz.

    Conclusions:

    • The developed electrooptic modulators offer significantly lower power consumption for infrared applications.
    • These modulators are suitable for high-speed modulation at 10 micrometers with low driver power (< 25 mW/MHz).
    • The device design shows potential for advanced electrooptic modulation with improved efficiency.