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Atomically Traceable Nanostructure Fabrication
Published on: July 17, 2015
A path to ultranarrow patterns using self-assembled lithography
Yeon Sik Jung1, J B Chang, Eric Verploegen
1Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.
Nano Letters
|February 12, 2010
Summary
Researchers developed novel methods for self-assembling block copolymer (BCP) thin films to create highly ordered sub-10-nm patterns. This breakthrough enables precise fabrication of nanoscale features, including 8-nm-wide tungsten nanowires.
Area of Science:
- Materials Science
- Nanotechnology
- Polymer Chemistry
Background:
- Block copolymer (BCP) self-assembly is crucial for creating nanoscale patterns.
- Achieving high ordering, registration, and pattern transfer for features below 10 nm remains challenging.
Purpose of the Study:
- To establish methods for forming highly ordered sub-10-nm grating patterns using BCP thin films.
- To demonstrate hierarchical registration of BCP patterns for diverse geometries and precise control.
- To fabricate sub-10-nm nanowires from these self-assembled BCP patterns.
Main Methods:
- Utilized solvent-annealing and templating techniques with poly(styrene-b-dimethylsiloxane) (PS-PDMS) diblock copolymers.
- Employed hierarchical registration of BCP patterns for improved pattern control.
- Applied reactive ion etching for pattern transfer to create nanowires.
Main Results:
- Successfully formed highly ordered grating patterns with 8-nm line width and 17-nm period.
- Demonstrated hierarchical registration enabling complex pattern geometries and precise alignment.
- Fabricated sub-10-nm tungsten nanowires with excellent order and uniformity.
Conclusions:
- Developed effective methods for sub-10-nm feature fabrication using BCP self-assembly.
- Hierarchical registration offers a pathway to diversify nanoscale pattern geometries and enhance precision.
- The process is suitable for fabricating high-quality, uniform sub-10-nm nanowires.
