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Related Experiment Video

Updated: Jun 16, 2026

Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding
14:52

Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding

Published on: September 23, 2018

Graphene nanomesh.

Jingwei Bai1, Xing Zhong, Shan Jiang

  • 1Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, USA.

Nature Nanotechnology
|February 16, 2010
PubMed
Summary

Researchers developed a graphene nanomesh to create semiconducting films for electronics. This new structure overcomes limitations of graphene nanoribbons, enabling higher performance transistors at room temperature.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Condensed Matter Physics

Background:

  • Graphene, a semimetal with a zero bandgap, has potential for electronics but is unsuitable for room-temperature field-effect transistors.
  • Graphene nanoribbons can open a bandgap but suffer from low currents and fabrication challenges for dense arrays.
  • Existing methods for creating nanostructured graphene face scalability and performance limitations.

Purpose of the Study:

  • To develop a novel graphene nanostructure, termed graphene nanomesh, for creating semiconducting thin films.
  • To enable room-temperature transistor operation with improved current handling and on-off ratios.
  • To establish a scalable fabrication method for ordered graphene nanostructures for advanced electronic devices.

Main Methods:

  • Utilized block copolymer lithography to fabricate graphene nanomeshes with tunable periodicities and narrow neck widths (down to 5 nm).
  • Fabricated field-effect transistors using the synthesized graphene nanomesh structures.
  • Investigated the electronic properties, including current carrying capacity and on-off ratio, of the nanomesh devices.

Main Results:

  • Graphene nanomesh successfully opened a bandgap in graphene, creating a semiconducting thin film.
  • Nanomesh transistors exhibited nearly 100 times greater currents compared to individual graphene nanoribbon devices.
  • Achieved tunable on-off ratios comparable to nanoribbon devices by adjusting neck width.

Conclusions:

  • Graphene nanomesh is a promising nanostructure for overcoming the limitations of graphene in electronic applications.
  • Block copolymer lithography offers a scalable route for producing ordered graphene nanostructures for device fabrication.
  • This approach facilitates the rational design and manufacturing of high-performance graphene-based electronics and circuits.

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