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Related Experiment Video

Updated: Jun 16, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Planar germanium photodiodes.

J Conradi

    Applied Optics
    |February 16, 2010
    PubMed
    Summary
    This summary is machine-generated.

    New germanium photodiodes offer a broad spectral response from 0.6 to 1.85 micrometers. These detectors are suitable for various temperatures and applications, demonstrating excellent performance characteristics.

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    Area of Science:

    • Semiconductor Physics
    • Optoelectronics
    • Materials Science

    Background:

    • Germanium (Ge) is a key material for infrared (IR) detection due to its suitable bandgap.
    • Photodiodes are essential semiconductor devices for converting light into electrical signals.
    • Planar passivation techniques improve device stability and performance.

    Purpose of the Study:

    • To develop and characterize planar passivated germanium photodiodes.
    • To assess the performance of these photodiodes across a wide temperature range.
    • To evaluate their suitability for infrared detection applications.

    Main Methods:

    • Fabrication of planar passivated germanium photodiodes using established semiconductor processing techniques.
    • Electrical and optical characterization at room temperature (22°C) and cryogenic temperatures (77 K).

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    Last Updated: Jun 16, 2026

    Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
    06:57

    Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

    Published on: July 17, 2020

    Developing High Performance GaP/Si Heterojunction Solar Cells
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    Published on: November 16, 2018

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  • Measurement of key performance parameters including spectral response, capacitance, rise/fall times, leakage current, detectivity (D*), and 3-dB frequency.

    • Main Results:

    • Achieved a useful spectral response from 0.6 to 1.85 micrometers at 22°C and 20 V.
    • Measured diode capacitance of 100 pF/cm², rise/fall times of 10 nsec, and leakage current of 2.5 mA/cm².
    • Obtained a detectivity (D*) of approximately 2.5 x 10¹⁰ cm/W/Hz at 1.54 micrometers with a 3-dB frequency of ~45 MHz.
    • Successfully fabricated single and multiple element detectors with varying element sizes and spacing, operational from 77 K to room temperature.

    Conclusions:

    • Planar passivated germanium photodiodes exhibit excellent performance characteristics for infrared detection.
    • The developed photodiodes are suitable for operation across a broad temperature range, from cryogenic to room temperature.
    • These devices represent a significant advancement for infrared sensing applications requiring broad spectral coverage and high performance.