Related Experiment Video

Updated: Jun 16, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

Distributed-feedback coupling in Ga(1-x)Al(x)As double-heterostructure lasers: effect of aluminum concentration

J T Boyd, D B Anderson

    Applied Optics
    |February 16, 2010
    PubMed

    More Related Videos

    Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots15:47

    Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

    Published on: November 1, 2013

    Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures11:54

    Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

    Published on: February 8, 2018

    Related Concept Videos

    Biasing of Metal-Semiconductor Junctions01:27

    Biasing of Metal-Semiconductor Junctions

    Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
    In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
    Small-Signal Analysis of MOSFET Amplifiers01:23

    Small-Signal Analysis of MOSFET Amplifiers

    In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
    Carrier Generation and Recombination01:22

    Carrier Generation and Recombination

    Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
    This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
    Indirect generation involves an...