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Determination of Crystal Structures01:29

Determination of Crystal Structures

In the late 1800s, the revelation that light extended beyond visible wavelengths led to the discovery of X-rays by Wilhelm Roentgen. Recognized as high-energy electromagnetic radiation with short wavelengths, X-rays prompted exploration into their interaction with crystals. Max von Laue proposed in 1912 that the periodic arrangement of atoms, ions, or molecules in crystals would cause them to diffract X-rays, a hypothesis confirmed through experiments with copper sulfate and zinc sulfide...

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Related Experiment Video

Updated: Jun 16, 2026

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
07:50

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Ion implanted photodiode detectors in epitaxial (Ga(x) In(1-x))As.

P K Ajmera, J R Hauser

    Applied Optics
    |February 16, 2010
    PubMed
    Summary

    Ion-implanted p-n junction photodiodes made from (Ga(x)In(1-x))As show high quantum efficiency across the composition range. Optimized devices achieve excellent detectivity at room and cryogenic temperatures for infrared applications.

    Area of Science:

    • Materials Science
    • Optoelectronics
    • Semiconductor Physics

    Background:

    • Gallium Indium Arsenide (Ga(x)In(1-x))As is a tunable semiconductor alloy with applications in optoelectronics.
    • P-n junction photodiodes are critical components for light detection.

    Purpose of the Study:

    • To investigate the photoresponse of ion-implanted p-n junction photodiodes in epitaxially grown (Ga(x)In(1-x))As.
    • To explore the performance across the entire composition range (0 < x < 1).

    Main Methods:

    • Fabrication of p-n junction photodiodes using ion implantation.
    • Epitaxial growth of (Ga(x)In(1-x))As material.
    • Characterization of photoresponse and detectivity (D*) at various wavelengths and temperatures.

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    Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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    Last Updated: Jun 16, 2026

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    07:50

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    Published on: July 17, 2015

    Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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    Published on: November 24, 2016

    Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
    06:57

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    Published on: July 17, 2020

    Main Results:

    • High quantum efficiency observed in devices with high Ga content (high x).
    • Peak detectivity (D*) exceeding 10^11 cm(Hz)^1/2/W at 0.8-microm wavelength at room temperature.
    • Peak detectivity (D*) of 5 x 10^10 cm(Hz)^1/2/W achieved at 1.4-microm wavelength at 165 K.

    Conclusions:

    • Ion-implanted (Ga(x)In(1-x))As photodiodes demonstrate excellent performance for infrared detection.
    • The composition of (Ga(x)In(1-x))As can be tailored to optimize photodiode performance for specific wavelength ranges and operating temperatures.