Related Experiment Video
Updated: Jun 16, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Nonlinear absorption in direct-gap semiconductors
Abstract:
Nonlinear absorption coefficients have been calculated for certain direct-bandgap semiconductors at 0.694-microm, 1.06-microm, 1.318-microm, and 10.6-microm wavelengths and compared with experimental results. The second- order perturbation theories of Braunstein and Basov yield underestimates and overestimates, respectively, of the nonlinear absorption constants. The numerical values are dependent upon the use of appropriate effective band masses, dielectric constants, and electron spin degeneracy factors. However, the Keldysh model gives second-order absorption constants that are intermediate between the two perturbation calculations. Although the Keldysh model often underestimates the value, in general, it yields the estimate of the magnitude of the two-photon absorption coefficient. The one-photon band-edge absorption in GaAs and InSb is predicted surprisingly well by the Keldysh model.
Related Concept Videos
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Types of Semiconductors
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

